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2003 Course Optical & Microwave Communication

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Total No. of Questions : 12] P991 [Total No. of Pages : 4 [3664]-205 B.E. (E & T/C) OPTICAL AND MICROWAVE COMMUNICATION (2003 Course) Time : 3 Hours] [Max. Marks : 100 Instructions to the candidates: 1) Attempt Q. 1 or Q. 2, Q. 3 or Q. 4, Q. 5 or Q. 6 from section-I and Q. 7 or Q. 8, Q. 9 or Q. 10, Q. 11 or Q. 12 from section-II. 2) Answers to the two sections should be written in separate books. 3) Neat diagrams must be drawn wherever necessary. 4) Figures to the right indicate full marks. 5) Use of logarithmic tables, slide rule, Mollier charts, electronic pocket calculator and steam tables is allowed. 6) Assume suitable data, if necessary. SECTION - I Q1) a) Explain in detail the structure of edge emitting LED. [6] b) A GaAs planar LED emitting at a wavelength of 0.85 m has an internal quantum efficiency of 60% when passing a forward current of 20 mAs-1. Estimate the optical power emitted by the device into air, and hence determine the external power efficiency if the potential difference across the device is 1V. It may be assumed that the transmission factor at the GaAs - Air interface is 0.68 and that the refractive index of GaAs is 3.6. [6] c) Explain the working of avalanche photodiode. Which are three factors that limits the response time of the device? [6] OR Q2) a) What are the advantages of semiconductor injection laser over other semiconductor sources that may be used for optical communications?[6] b) The rediative and nonradiative recombination lifetimes of the minority carriers in the active region of a double heterojunction LED are 50 ns and 110 ns respectively. Determine the total carrier recombination lifetime and the power internally generated within the device when the peak emission wavelength is 0.87 m at a drive current of 40 MA. [6] c) With the help of neat diagram explain the construction and working of p-i-n photodiode. [6] P.T.O.

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