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Pune University - Sem - I : Foundation of Semiconductor Devices, April 2010

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Total No. of Questions : 5] P1154 [Total No. of Pages : 2 [3729]- 101 M.Sc. ELECTRONIC SCIENCE EL1 UTO 1 : Foundation of Semiconductor Devices (Sem.-I) (New 2008 pattern) Time : 3 Hours] [Max. Marks : 80 Instructions to the candidates: 1) 2) 3) All questions are compulsory. Draw neat diagrams wherever necessary. Use of non-programmable calculator is allowed. Q1) Attempt any Two : [2 8 = 16] a) State and explain the importance of schrodinger s wave equation. Deduce the expression for quantized energy En of a particle kept in a infite potential well with V(x) = 0 [for 0 < x < 1] and V (x) = [for x = 0, L] b) Using proper energy band diagram, explain the phenomenon of tunneling in a P-n junction diode. c) What is Hall effect ? Explain Hall Voltage and Hall coefficient. what are the Hall voltage values for n-type and p-type semiconductors? Q2) Attempt any Two : [2 8 = 16] a) Why are equivalent circuit models used in BJT analysis? Explain an hybridP: model for this device. b) How are JFETS different from MOSFETS? Draw the small-signal equivalent circuit for JFET and explain ac response of this device. c) Explain the construction of a MOSFET. Describe the ID-VD characteristics of this device. P.T.O. Q3) Attempt any four : [4 4 = 16] a) Describe ionic bond, covalent bond and metallic bond with proper examples of each. b) What are Miller indices? what is the significance of labeling a crystal using reciprocal lattice? c) Obtain the diffusion equation, Dn/ n = KT/q. d) Differentiate between BJT and HBT. e) The breakdown voltage of P - n junction decreases as doping concentration increases comment. Q4) Attempt any four : [4 4 = 16] a) What is a PIN photodiode? Explain its working in brief. b) A sample of Si is doped with 1017 phosphorous atoms / cm3. find the resistivity and hall voltage in the sample with dimensions: thickness =100 m Ix = 1mA, Bz = 10-5 wb/cm2, n = 700cm2/V-sec. c) A silicon sample is doped with 1020 Arsenic atoms/cm3. Find the fermilevel Ef relative to the intrinsic level Ei. Also determine the equilibrium hole concentration at 300K. d) Explain the effect of narrow channel on the working of MOSFET. e) Describe the current - voltage characterisfics of a schottky diode. Q5) Attempt any four : [4 4 = 16] a) What is the correlation between lattice matching and epitaxial growth? Explain. b) State poissons s equation in terms of charge density and number of charge carriers. c) Consider a diode to be reverse biased. write and explain its junction capacitance d) What is effective mass? state its importance in semiconductors. e) What are non-ideal effects in JFET? Explain any one in detail. zzzz [3729]-101 - 2-

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Additional Info : M.Sc. Electronic Science, EL1 UT 01 : Foundation of Semiconductor Devices( New Course) (2008 Pattern) (Semister - I), Pune University
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