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Pune University - Sem - I : Foundation of Semiconductor Devices, April 2010

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Total No. of Questions : 5] P1154 [Total No. of Pages : 2 [3729]- 101 M.Sc. ELECTRONIC SCIENCE EL1 UTO 1 : Foundation of Semiconductor Devices (Sem.-I) (New 2008 pattern) Time : 3 Hours] [Max. Marks : 80 Instructions to the candidates: 1) 2) 3) All questions are compulsory. Draw neat diagrams wherever necessary. Use of non-programmable calculator is allowed. Q1) Attempt any Two : [2 8 = 16] a) State and explain the importance of schrodinger s wave equation. Deduce the expression for quantized energy En of a particle kept in a infite potential well with V(x) = 0 [for 0 < x < 1] and V (x) = [for x = 0, L] b) Using proper energy band diagram, explain the phenomenon of tunneling in a P-n junction diode. c) What is Hall effect ? Explain Hall Voltage and Hall coefficient. what are the Hall voltage values for n-type and p-type semiconductors? Q2) Attempt any Two : [2 8 = 16] a) Why are equivalent circuit models used in BJT analysis? Explain an hybridP: model for this device. b) How are JFETS different from MOSFETS? Draw the small-signal equivalent circuit for JFET and explain ac response of this device. c) Explain the construction of a MOSFET. Describe the ID-VD characteristics of this device. P.T.O.

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Additional Info : M.Sc. Electronic Science, EL1 UT 01 : Foundation of Semiconductor Devices( New Course) (2008 Pattern) (Semister - I), Pune University
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