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CBSE Class XII 2014 : APPLIED PHYSICS

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H$moS> Z . Series OSR Code No. amob Z . 105 narjmWu H$moS >H$mo C ma-nwp VH$m Ho$ _wI-n >na Ad ` {bIo & Roll No. Candidates must write the Code on the title page of the answer-book. H $n`m Om M H$a b| {H$ Bg Z-n _o _w{ V n > 4 h & Z-n _| Xm{hZo hmW H$s Amoa {XE JE H$moS >Z ~a H$mo N>m C ma-nwp VH$m Ho$ _wI-n > > na {bI| & H $n`m Om M H$a b| {H$ Bg Z-n _| >4 Z h & H $n`m Z H$m C ma {bIZm ew $ H$aZo go nhbo, Z H$m H $_m H$ Ad ` {bI| & Bg Z-n H$mo n T>Zo Ho$ {bE 15 {_ZQ >H$m g_` {X`m J`m h & Z-n H$m {dVaU nydm _| 10.15 ~Oo {H$`m OmEJm & 10.15 ~Oo go 10.30 ~Oo VH$ N>m Ho$db Z-n H$mo n T>|Jo Am a Bg Ad{Y Ho$ Xm amZ do C ma-nwp VH$m na H$moB C ma Zht {bI|Jo & Please check that this question paper contains 4 printed pages. Code number given on the right hand side of the question paper should be written on the title page of the answer-book by the candidate. Please check that this question paper contains 4 questions. Please write down the Serial Number of the question before attempting it. 15 minutes time has been allotted to read this question paper. The question paper will be distributed at 10.15 a.m. From 10.15 a.m. to 10.30 a.m., the students will read the question paper only and will not write any answer on the answer-book during this period. `mdhm[aH$ ^m {VH$s (g mp VH$) APPLIED PHYSICS (Theory) {ZYm [aV g_` : 3 K Q>o A{YH$V_ A H$ : 60 Time allowed : 3 hours {ZX}e : g^r Zm| Ho$ C ma Xr{OE & Instructions : Maximum Marks : 60 Attempt all questions. 105 1 P.T.O. 1. (A) p Wa-{d w{VH$s _| JmCg H$m _o` ~VmBE & Bg _o` H$s ghm`Vm go {H$gr Amdo{eV Jmobo Ho$ {H$gr {ZH$Q> {~ X na, {d wV -jo Vrd Vm kmV H$aZo Ho$ {bE gy Wm{nV H$s{OE O~ (i) {~ X EH$g_mZ Amdo{eV Jmobo go ~mha hmo (ii) {~ X EH$g_mZ Amdo{eV Jmobo Ho$ A Xa hmo AWdm Cg {~ X {d wV Amdoe Ho$ n[a_mU H$mo kmV H$s{OE, {Oggo 50 go_r H$s X ar na CgH$s {d wV -jo Vrd Vm H$m n[a_mU 2 NC 1 hmo & (~) {d wV Ymamdmhr d mmH$ma Hw$ S>br Ho$ Ho$ {~ X na Mw ~H$s`-jo Vrd Vm Ho$ {bE J{UVr` gy H$s WmnZm H$s{OE & (g) Ge VWm Si na_mUwAm| H$s na_mUw-g aMZmE {M mam Xem BE & BZ nXmWm] H$mo P- H$ma VWm N- H$ma Ho$ AY MmbH$ H $go ~Zm`m Om gH$Vm h ? (a) (b) (c) 2. 105 6 5 4 State Gauss s theorem in electrostatics. Use it to find electric field strength at a point (i) Outside a uniformly charged sphere (ii) Inside a uniformly charged sphere OR What is the magnitude of a point electric charge such that the electric field strength 50 cm away from it has the magnitude of 2 NC 1 ? Derive a mathematical expression for the magnetic field strength at the centre of a circular coil carrying electric current. Draw the atomic structures of Ge and Si atoms. How can these materials be made P-type and N-type semi-conductors ? (A) Mw ~H$s` nXmWm] H$s Mw ~H$s`-jo Vrd Vm , Mw ~H$s` A{^dmh KZ d VWm Mw ~H$erbVm nXm| H$mo n[a^m{fV H$s{OE & BZHo$ S.I. _m H$ {b{IE & AWdm {H$gr {d wV Ymamdmhr grYo MmbH$ go 0.5 m H$s X ar na BgH$s Mw ~H$s`-jo Vrd Vm H$m n[a_mU 5 10 6 T h & MmbH$ _| dm{hV {d wV -Ymam H$s _m m kmV H$s{OE & (~) Zm{^H$s` {dI S>Z VWm Zm{^H$s` g b`Z {H $`mAm| _| A Va n > H$s{OE & {H$gr {dI S>Zr` nXmW H$m Zm_ {b{IE Omo Zm{^H$s` [aEo Q>a _| `w $ hmoVm hmo & Zm{^H$s` g b`Z go D$Om AmgmZr go `m| Zht C n H$s Om gH$Vr ? (g) EH$ {d wV n[anW {M H$s ghm`Vm go EH$ P-N-P Q >m { O Q>a H$s H$m` {d{Y H$m C oI H$s{OE & n[anW _| Amdoe dmhH$m| H$s J{V H$mo X{e V H$s{OE & 2 5 6 4 (a) Define the terms magnetic field strength , magnetic flux density and permeability of magnetic materials. Write their S.I. units. OR The magnitude of the magnetic field strength at a distance of 0.5 m from the current carrying straight conductor is 5 10 6 T. Calculate the current in the conductor. (b) (c) 3. Distinguish between nuclear fission and nuclear fusion . Name one fissile material used in a nuclear reactor. Why can t nuclear fusion energy be produced easily ? With the help of a circuit diagram, explain the working of a P-N-P transistor. Show the movement of charge carriers in the circuit. (A) {H$gr g Ym[a H$s Ym[aVm e X H$s n[a^mfm {b{IE & BgH$m S.I. _m H$ {b{IE & loUrH $_ _| g `mo{OV n g Ym[a m| H$s Hw$b Ym[aVm Ho$ {bE gy Wm{nV H$s{OE & (~) (g) ao{S>`mo-g_ Wm{ZH$ `m hmoVo h ? BZHo$ H$moB Mma Cn`moJ {b{IE & AWdm {d{H$aUm| go C n Omo{I_ `m h ? BZgo ~Mmd hoVw H$moB Mma gwajm gmdYm{Z`m {b{IE & Z O (ew ) AY MmbH$ `m hmoVo h ? B h| An `r AY MmbH$ H $go ~Zm`m Om gH$Vm h ? Vmn_mZ AY MmbH$ nXmWm] H$s MmbH$Vm H$mo H $go ^m{dV H$aVm h ? (a) 6 4 Define the term capacitance of a capacitor and write its S.I. unit. Establish a relation for the total capacitance of n capacitors connected in series. (b) 5 What are radio-isotopes ? Write their any four uses. OR What are radiation hazards ? Write any four safety measures which can be taken against these. (c) 4. 105 What are intrinsic semi-conductors ? How can these be made extrinsic semi-conductors ? How does temperature affect the conductivity of semi-conductor materials ? (A) {H$gr Amdoe Ho$ H$maU {H$gr {~ X na {d wV {d^d H$mo n[a^m{fV H$s{OE & BgH$m S.I. _m H$ {b{IE & {H$gr {~ X {d wV Amdoe Ho$ H$maU BgHo$ {bE J{UVr` gy H$s WmnZm H$s{OE & 3 5 P.T.O. (~) (g) Mw ~H$s`-jo _| J{V_mZ {d wV Amdoe na bJm ~b {H$Z-{H$Z KQ>H$m| na {Z^ a H$aVm h ? Bg bJmE JE ~b VWm BZ KQ>H$m| Ho$ ~rM H$m gy {b{IE & Bg ~b H$s {Xem kmV H$aZo Ho$ {bE `moJ _| bmE OmZo dmbo {Z`_ H$m {ddaU Xr{OE & EH$ Zm_m {H$V {d wV n[anW {M H$s ghm`Vm go, EH$ AY MmbH$ S>m`moS> H$s nyU Va J {X >H$mar Ho$ $n _| H$m` Umbr H$s `m `m H$s{OE & AWdm P-N O eZ `m hmoVm h ? BgH$mo AJ {X{eH$ Ed_ n M{X{eH$ ~m`gm| na bJmE OmZo na `h H $go H$m` H$aVm h ? n[anW {M m| H$s ghm`Vm go n > H$s{OE & (a) On what factors does the force experienced by a moving electric charge inside a magnetic field depend ? Write the relation between the force experienced and these factors. State the rule used to determine the direction of this force. (c) 4 Define the term electric potential at a point due to a charge. Write its S.I. unit. Derive a mathematical expression for it due to a point electric charge. (b) 6 With the help of a labelled circuit diagram, explain the working of a semi-conductor diode as a full wave rectifier. OR What is a P-N junction ? How does it function under forward and reverse biasings ? Explain with the help of circuit diagrams. ^m {VH$ {Z`Vm H$ : o = 8.854 10 12 Fm 1 o = 4 10 7 Hm 1 Bbo Q >m Z na Amdoe H$s _m m = 1.6 10 19 C 1 = 9 109 Nm2 C 2 4 o Physical constants : o = 8.854 10 12 Fm 1 o = 4 10 7 Hm 1 Charge on an electron = 1.6 10 19 C 1 = 9 109 Nm2 C 2 4 o 105 4 100

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Additional Info : CBSE Class XII Board Solved Question Paper 2014 Applied Physiscs
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